NTP60N06G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Rise Time :

180.7ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate to Source Voltage (Vgs) :

20V

Current Rating :

60A

Lead Free :

Lead Free

JESD-30 Code :

R-PSFM-T3

ECCN Code :

EAR99

Power Dissipation :

150W

Time@Peak Reflow Temperature-Max (s) :

40

Continuous Drain Current (ID) :

60A

Rds On (Max) @ Id, Vgs :

14m Ω @ 30A, 10V

JESD-609 Code :

e3

Vgs (Max) :

±20V

Qualification Status :

Not Qualified

Number of Elements :

1

Avalanche Energy Rating (Eas) :

454 mJ

Fall Time (Typ) :

142.5 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

94.5 ns

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

60V

Package / Case :

TO-220-3

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON

Element Configuration :

Single

Drain to Source Breakdown Voltage :

60V

Power Dissipation-Max :

2.4W Ta 150W Tj

Case Connection :

DRAIN

Mount :

Through Hole

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Published :

2010

Terminal Finish :

Tin (Sn)

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

260

Current - Continuous Drain (Id) @ 25°C :

60A Ta

JEDEC-95 Code :

TO-220AB

Input Capacitance (Ciss) (Max) @ Vds :

3220pF @ 25V

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

81nC @ 10V