NTP6413ANG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

28m Ω @ 42A, 10V

Operating Temperature :

-55°C~175°C TJ

Drain to Source Breakdown Voltage :

100V

Number of Pins :

3

Length :

10.28mm

Vgs (Max) :

±20V

Width :

4.82mm

Packaging :

Tube

Power Dissipation :

136W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

136W Tc

Weight :

4.535924g

Avalanche Energy Rating (Eas) :

200 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

51nC @ 10V

Published :

2009

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 25V

Transistor Element Material :

SILICON

Pin Count :

3

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 day ago)

Threshold Voltage :

4V

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-220-3

Surface Mount :

No

Fall Time (Typ) :

71 ns

Gate to Source Voltage (Vgs) :

20V

JEDEC-95 Code :

TO-220AB

Case Connection :

DRAIN

Continuous Drain Current (ID) :

42A

Mounting Type :

Through Hole

FET Type :

N-Channel

Resistance :

28mOhm

Nominal Vgs :

4 V

RoHS Status :

RoHS Compliant

Number of Elements :

1

Lead Free :

Lead Free

Number of Terminations :

3

Pbfree Code :

yes

Height :

15.75mm

Turn-Off Delay Time :

52 ns

Rise Time :

84ns

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Turn On Delay Time :

13 ns