NTMSD3P102R2SG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

750pF @ 16V

FET Feature :

Schottky Diode (Isolated)

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

20V

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Drain to Source Voltage (Vdss) :

20V

Number of Terminations :

8

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

MATTE TIN

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Vgs (Max) :

±20V

Surface Mount :

yes

Pbfree Code :

No

Series :

FETKY™

Power Dissipation-Max :

730mW Ta

Drain Current-Max (Abs) (ID) :

2.34A

JESD-609 Code :

e3

Transistor Element Material :

SILICON

JESD-30 Code :

R-PDSO-G8

Pin Count :

8

Qualification Status :

COMMERCIAL

Mounting Type :

Surface Mount

FET Type :

P-Channel

Rds On (Max) @ Id, Vgs :

85m Ω @ 3.05A, 10V

Drain-source On Resistance-Max :

0.085Ohm

Current - Continuous Drain (Id) @ 25°C :

2.34A Ta

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Feedback Cap-Max (Crss) :

135 pF

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Form :

Gull wing

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED