NTMS4177PR2G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

840mW Ta

FET Type :

P-Channel

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

12m Ω @ 11.4A, 10V

Packaging :

Tape and Reel (TR)

Pin Count :

8

Drain Current-Max (Abs) (ID) :

6.6A

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

-8.9A

Power Dissipation :

2.5W

REACH SVHC :

No SVHC

Turn-Off Delay Time :

64 ns

Element Configuration :

Single

JESD-609 Code :

e3

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Vgs (Max) :

±20V

Width :

4mm

Height :

1.5mm

Number of Pins :

8

Surface Mount :

yes

Transistor Element Material :

SILICON

Fall Time (Typ) :

36 ns

Pbfree Code :

yes

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Terminal Position :

Dual

ECCN Code :

EAR99

Threshold Voltage :

-2.5V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Finish :

Tin (Sn)

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Length :

5mm

Operating Temperature :

-55°C~150°C TJ

Published :

2000

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn On Delay Time :

18 ns

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Rise Time :

13ns

Drain to Source Breakdown Voltage :

-30V

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

3100pF @ 24V

Factory Lead Time :

31 Weeks

Current - Continuous Drain (Id) @ 25°C :

6.6A Ta

Number of Terminations :

8