NTMS3P03R2G
- Mfr.Part #
- NTMS3P03R2G
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 2.34A 8SOIC
- Stock
- 16,593
- In Stock :
- 16,593
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 30V
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- MATTE TIN
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 8
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Power Dissipation-Max :
- 730mW Ta
- Additional Feature :
- AVALANCHE RATED
- Input Capacitance (Ciss) (Max) @ Vds :
- 750pF @ 24V
- Drain-source On Resistance-Max :
- 0.085Ohm
- Surface Mount :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Qualification Status :
- COMMERCIAL
- JESD-30 Code :
- R-PDSO-G8
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- DS Breakdown Voltage-Min :
- 30V
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 2.34A Ta
- Packaging :
- Tape and Reel (TR)
- Reach Compliance Code :
- Unknown
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Transistor Application :
- SWITCHING
- Pbfree Code :
- No
- Drain Current-Max (Abs) (ID) :
- 2.34A
- Rds On (Max) @ Id, Vgs :
- 85m Ω @ 3.05A, 10V
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 8
- FET Type :
- P-Channel
- Feedback Cap-Max (Crss) :
- 135 pF
- Vgs (Max) :
- ±20V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Form :
- Gull wing
- Gate Charge (Qg) (Max) @ Vgs :
- 25nC @ 10V
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Datasheets
- NTMS3P03R2G

P-Channel Tape & Reel (TR) 85m Ω @ 3.05A, 10V ±20V 750pF @ 24V 25nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)
NTMS3P03R2G Overview
A device's maximal input capacitance is 750pF @ 24V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 2.34A, which is the maximum continuous current the device can conduct.To maintain normal operation, it is recommended that the DS breakdown voltage be above 30V.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
NTMS3P03R2G Features
a 30V drain to source voltage (Vdss)
NTMS3P03R2G Applications
There are a lot of Rochester Electronics, LLC
NTMS3P03R2G applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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