NTMS4700NR2G
- Mfr.Part #
- NTMS4700NR2G
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 8.6A 8SOIC
- Stock
- 27,826
- In Stock :
- 27,826
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Terminal Finish :
- MATTE TIN
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 8.6A Ta
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Qualification Status :
- COMMERCIAL
- Surface Mount :
- yes
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Vgs (Max) :
- ±20V
- Peak Reflow Temperature (Cel) :
- 260
- Drain-source On Resistance-Max :
- 0.01Ohm
- DS Breakdown Voltage-Min :
- 30V
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 860mW Ta
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Reach Compliance Code :
- Unknown
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 24nC @ 4.5V
- Number of Terminations :
- 8
- JESD-30 Code :
- R-PDSO-G8
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.6pF @ 24V
- Drain Current-Max (Abs) (ID) :
- 8.6A
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Rds On (Max) @ Id, Vgs :
- 7.2m Ω @ 13A, 10V
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 8
- Drain to Source Voltage (Vdss) :
- 30V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Datasheets
- NTMS4700NR2G

N-Channel Tape & Reel (TR) 7.2m Ω @ 13A, 10V ±20V 1.6pF @ 24V 24nC @ 4.5V 30V 8-SOIC (0.154, 3.90mm Width)
NTMS4700NR2G Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1.6pF @ 24V.There is no drain current on this device since the maximum continuous current it can conduct is 8.6A.In order for DS breakdown voltage to remain above 30V, it should remain above the 30V level.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
NTMS4700NR2G Features
a 30V drain to source voltage (Vdss)
NTMS4700NR2G Applications
There are a lot of Rochester Electronics, LLC
NTMS4700NR2G applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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