NTMS4176PR2G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

19.5 ns

Lifecycle Status :

OBSOLETE (Last Updated: 4 days ago)

Fall Time (Typ) :

9 ns

Pbfree Code :

yes

Turn On Delay Time :

15 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

810mW Ta

Number of Elements :

1

Mount :

Surface Mount

FET Type :

P-Channel

Rise Time :

9ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

RoHS Status :

RoHS Compliant

Rds On (Max) @ Id, Vgs :

18m Ω @ 9.6A, 10V

Terminal Position :

Dual

Terminal Finish :

Tin (Sn)

Radiation Hardening :

No

Lead Free :

Lead Free

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

30V

Gate to Source Voltage (Vgs) :

25V

Continuous Drain Current (ID) :

-7.3A

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Published :

2008

Input Capacitance (Ciss) (Max) @ Vds :

1720pF @ 24V

Vgs (Max) :

±25V

Pin Count :

8

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

5.5A Ta

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Number of Terminations :

8

Number of Pins :

8

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Power Dissipation :

1.44W

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 4.5V

Drain Current-Max (Abs) (ID) :

5.5A

Packaging :

Tape and Reel (TR)