NTMS10P02R2

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Number of Terminations :

8

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Terminal Position :

Dual

Rise Time :

40ns

Element Configuration :

Single

Power Dissipation-Max :

1.6W Ta

Current Rating :

-10A

Peak Reflow Temperature (Cel) :

260

Voltage - Rated DC :

-20V

Height :

1.5mm

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 4.5V

Pbfree Code :

yes

Radiation Hardening :

No

Contact Plating :

Tin

Pin Count :

8

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Drain Current-Max (Abs) (ID) :

4.5A

Fall Time (Typ) :

110 ns

Turn On Delay Time :

25 ns

FET Type :

P-Channel

Published :

2006

Length :

5mm

Vgs (Max) :

±12V

Power Dissipation :

2.5W

REACH SVHC :

Unknown

Current - Continuous Drain (Id) @ 25°C :

8.8A Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Threshold Voltage :

-880mV

Resistance :

14mOhm

Operating Temperature :

-55°C~150°C TJ

Width :

4mm

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

12V

Drain to Source Breakdown Voltage :

-20V

Input Capacitance (Ciss) (Max) @ Vds :

3640pF @ 16V

Number of Pins :

8

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

10A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Turn-Off Delay Time :

110 ns

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Drain to Source Voltage (Vdss) :

20V

Factory Lead Time :

21 Weeks

Rds On (Max) @ Id, Vgs :

14m Ω @ 10A, 4.5V

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON