NTMSD3P102R2G
- Mfr.Part #
- NTMSD3P102R2G
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 2.34A 8SOIC
- Stock
- 3,465
- In Stock :
- 3,465
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 730mW Ta
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Feedback Cap-Max (Crss) :
- 135 pF
- Number of Elements :
- 1
- Lifecycle Status :
- OBSOLETE (Last Updated: 1 week ago)
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Terminal Finish :
- Tin (Sn)
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Fall Time (Typ) :
- 45 ns
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Input Capacitance (Ciss) (Max) @ Vds :
- 750pF @ 16V
- Number of Terminations :
- 8
- Qualification Status :
- Not Qualified
- RoHS Status :
- RoHS Compliant
- Pbfree Code :
- yes
- Published :
- 2007
- Turn-Off Delay Time :
- 45 ns
- ECCN Code :
- EAR99
- Number of Pins :
- 8
- Current Rating :
- -3.05A
- FET Feature :
- Schottky Diode (Isolated)
- Rise Time :
- 16ns
- Mounting Type :
- Surface Mount
- Continuous Drain Current (ID) :
- 2.34A
- Power Dissipation :
- 2W
- Current - Continuous Drain (Id) @ 25°C :
- 2.34A Ta
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Position :
- Dual
- Vgs (Max) :
- ±20V
- Pin Count :
- 8
- Reach Compliance Code :
- Unknown
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- Gull wing
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 85m Ω @ 3.05A, 10V
- Drain to Source Breakdown Voltage :
- -20V
- Gate Charge (Qg) (Max) @ Vgs :
- 25nC @ 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Voltage - Rated DC :
- -20V
- FET Type :
- P-Channel
- Packaging :
- Tape and Reel (TR)
- Series :
- FETKY™
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- NTMSD3P102R2G

P-Channel Tape & Reel (TR) 85m Ω @ 3.05A, 10V ±20V 750pF @ 16V 25nC @ 10V 8-SOIC (0.154, 3.90mm Width)
NTMSD3P102R2G Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 750pF @ 16V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 2.34A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -20V, and this device has a drainage-to-source breakdown voltage of -20VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 45 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
NTMSD3P102R2G Features
a continuous drain current (ID) of 2.34A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 45 ns
NTMSD3P102R2G Applications
There are a lot of ON Semiconductor
NTMSD3P102R2G applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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