NTMSD3P102R2G

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Mfr.Part #
NTMSD3P102R2G
Manufacturer
onsemi
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET P-CH 20V 2.34A 8SOIC
Stock
3,465
In Stock :
3,465

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation-Max :
730mW Ta
Time@Peak Reflow Temperature-Max (s) :
40
Feedback Cap-Max (Crss) :
135 pF
Number of Elements :
1
Lifecycle Status :
OBSOLETE (Last Updated: 1 week ago)
Transistor Element Material :
SILICON
Mount :
Surface Mount
Terminal Finish :
Tin (Sn)
Lead Free :
Lead Free
JESD-609 Code :
e3
Fall Time (Typ) :
45 ns
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Input Capacitance (Ciss) (Max) @ Vds :
750pF @ 16V
Number of Terminations :
8
Qualification Status :
Not Qualified
RoHS Status :
RoHS Compliant
Pbfree Code :
yes
Published :
2007
Turn-Off Delay Time :
45 ns
ECCN Code :
EAR99
Number of Pins :
8
Current Rating :
-3.05A
FET Feature :
Schottky Diode (Isolated)
Rise Time :
16ns
Mounting Type :
Surface Mount
Continuous Drain Current (ID) :
2.34A
Power Dissipation :
2W
Current - Continuous Drain (Id) @ 25°C :
2.34A Ta
Gate to Source Voltage (Vgs) :
20V
Terminal Position :
Dual
Vgs (Max) :
±20V
Pin Count :
8
Reach Compliance Code :
Unknown
Peak Reflow Temperature (Cel) :
260
Terminal Form :
Gull wing
Vgs(th) (Max) @ Id :
2.5V @ 250μA
Operating Temperature :
-55°C~150°C TJ
Transistor Application :
SWITCHING
Rds On (Max) @ Id, Vgs :
85m Ω @ 3.05A, 10V
Drain to Source Breakdown Voltage :
-20V
Gate Charge (Qg) (Max) @ Vgs :
25nC @ 10V
Configuration :
SINGLE WITH BUILT-IN DIODE
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Voltage - Rated DC :
-20V
FET Type :
P-Channel
Packaging :
Tape and Reel (TR)
Series :
FETKY™
Operating Mode :
ENHANCEMENT MODE
Datasheets
NTMSD3P102R2G
Introducing Transistors - FETs, MOSFETs - Single onsemi NTMSD3P102R2G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:8, Number of Pins:8, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:8-SOIC (0.154, 3.90mm Width), NTMSD3P102R2G pinout, NTMSD3P102R2G datasheet PDF, NTMSD3P102R2G amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NTMSD3P102R2G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NTMSD3P102R2G


P-Channel Tape & Reel (TR) 85m Ω @ 3.05A, 10V ±20V 750pF @ 16V 25nC @ 10V 8-SOIC (0.154, 3.90mm Width)

NTMSD3P102R2G Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 750pF @ 16V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 2.34A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -20V, and this device has a drainage-to-source breakdown voltage of -20VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 45 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.

NTMSD3P102R2G Features


a continuous drain current (ID) of 2.34A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 45 ns


NTMSD3P102R2G Applications


There are a lot of ON Semiconductor
NTMSD3P102R2G applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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