NTMS5P02R2

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

P-Channel

Factory Lead Time :

38 Weeks

Number of Terminations :

8

Continuous Drain Current (ID) :

5.4A

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

55 ns

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

1.25V @ 250μA

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Vgs (Max) :

±10V

Input Capacitance (Ciss) (Max) @ Vds :

1900pF @ 16V

Turn-Off Delay Time :

70 ns

Height :

1.5mm

Radiation Hardening :

No

Terminal Position :

Dual

Mounting Type :

Surface Mount

Number of Elements :

1

Surface Mount :

yes

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

3.95A Ta

Length :

5mm

Turn On Delay Time :

22 ns

Resistance :

26mOhm

Gate to Source Voltage (Vgs) :

10V

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

-20V

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

-20V

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

Additional Feature :

AVALANCHE RATED

Published :

2006

Power Dissipation :

2.5W

Peak Reflow Temperature (Cel) :

260

Nominal Vgs :

-900 mV

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Power Dissipation-Max :

790mW Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Current Rating :

-5.4A

Element Configuration :

Single

Drain to Source Voltage (Vdss) :

20V

Rds On (Max) @ Id, Vgs :

33m Ω @ 5.4A, 4.5V

Drain Current-Max (Abs) (ID) :

3.95A

Rise Time :

25ns

Pin Count :

8

Number of Pins :

8

Width :

4mm

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 4.5V