NTMS5835NLR2G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

yes

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

9.2A Ta

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Drain-source On Resistance-Max :

0.014Ohm

FET Type :

N-Channel

Terminal Form :

Gull wing

JESD-30 Code :

R-PDSO-G8

Vgs(th) (Max) @ Id :

3V @ 250µA

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

2.115pF @ 20V

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

1.5W Ta

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Drain to Source Voltage (Vdss) :

40V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

40V

Terminal Finish :

MATTE TIN

Drain Current-Max (Abs) (ID) :

9.2A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

8

Configuration :

SINGLE WITH BUILT-IN DIODE

Pbfree Code :

No

Rds On (Max) @ Id, Vgs :

10m Ω @ 10A, 10V

Pin Count :

8