NTMS4P01R2

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e0

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±10V

Rds On (Max) @ Id, Vgs :

45m Ω @ 4.5A, 4.5V

Reach Compliance Code :

not_compliant

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Feedback Cap-Max (Crss) :

400 pF

Vgs(th) (Max) @ Id :

1.15V @ 250μA

Packaging :

Tape and Reel (TR)

Number of Terminations :

8

Number of Elements :

1

RoHS Status :

Non-RoHS Compliant

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Terminal Finish :

Tin/Lead (Sn/Pb)

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.045Ohm

Terminal Form :

Gull wing

Current Rating :

-4.5A

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PDSO-G8

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

1850pF @ 9.6V

ECCN Code :

EAR99

Continuous Drain Current (ID) :

3.4A

Transistor Application :

SWITCHING

FET Type :

P-Channel

Power Dissipation-Max :

790mW Ta

Pin Count :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 4.5V

Current - Continuous Drain (Id) @ 25°C :

3.4A Ta

Published :

2004

Voltage - Rated DC :

-12V

Drain Current-Max (Abs) (ID) :

2.32A

Peak Reflow Temperature (Cel) :

240

Terminal Position :

Dual

Mounting Type :

Surface Mount

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Lead Free :

Contains Lead

Drain to Source Voltage (Vdss) :

12V