NTMS4937NR2G
- Mfr.Part #
- NTMS4937NR2G
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 8.6A 8SOIC
- Stock
- 63,706
- In Stock :
- 63,706
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Fall Time (Typ) :
- 38.9 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Vgs (Max) :
- ±20V
- Turn-Off Delay Time :
- 33.8 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 2563pF @ 25V
- Pbfree Code :
- yes
- Drain-source On Resistance-Max :
- 0.0065ohm
- Number of Pins :
- 8
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Terminal Finish :
- Tin (Sn)
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 38.5nC @ 10V
- Pin Count :
- 8
- Continuous Drain Current (ID) :
- 8.6A
- Transistor Application :
- SWITCHING
- Drain Current-Max (Abs) (ID) :
- 11.2A
- Operating Temperature :
- -55°C~150°C TJ
- Surface Mount :
- yes
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Published :
- 2009
- Rds On (Max) @ Id, Vgs :
- 6.5m Ω @ 7.5A, 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Factory Lead Time :
- 2 Weeks
- Power Dissipation-Max :
- 810mW Ta
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Turn On Delay Time :
- 12.3 ns
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Number of Terminations :
- 8
- Power Dissipation :
- 1.36W
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Position :
- Dual
- Current - Continuous Drain (Id) @ 25°C :
- 8.6A Ta
- ECCN Code :
- EAR99
- FET Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 30V
- Mounting Type :
- Surface Mount
- Rise Time :
- 3.6ns
- Datasheets
- NTMS4937NR2G

N-Channel Tape & Reel (TR) 6.5m Ω @ 7.5A, 10V ±20V 2563pF @ 25V 38.5nC @ 10V 8-SOIC (0.154, 3.90mm Width)
NTMS4937NR2G Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2563pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 8.6A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Drain current refers to the maximum continuous current a device can conduct, and it is 11.2A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 33.8 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 12.3 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
NTMS4937NR2G Features
a continuous drain current (ID) of 8.6A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 33.8 ns
NTMS4937NR2G Applications
There are a lot of ON Semiconductor
NTMS4937NR2G applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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