NTMS4935NR2G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

52.1nC @ 10V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

10A Ta

Input Capacitance (Ciss) (Max) @ Vds :

3.639pF @ 25V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Number of Terminations :

8

Rds On (Max) @ Id, Vgs :

5.1m Ω @ 7.5A, 10V

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

10A

Drain-source On Resistance-Max :

0.0051Ohm

DS Breakdown Voltage-Min :

30V

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

MATTE TIN

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Qualification Status :

COMMERCIAL

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pin Count :

8

JESD-609 Code :

e3

Surface Mount :

yes

Reach Compliance Code :

Unknown

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

810mW Ta

Drain to Source Voltage (Vdss) :

30V

Number of Elements :

1

Terminal Position :

Dual

Terminal Form :

Gull wing

JESD-30 Code :

R-PDSO-G8

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant