NTMS4920NR2G
- Mfr.Part #
- NTMS4920NR2G
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 10.6A 8SOIC
- Stock
- 7,505
- In Stock :
- 7,505
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 58.9nC @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- DS Breakdown Voltage-Min :
- 30V
- Power Dissipation-Max :
- 820mW Ta
- Drain-source On Resistance-Max :
- 0.0043Ohm
- Surface Mount :
- yes
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Factory Lead Time :
- 51 Weeks
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 8
- Terminal Position :
- Dual
- Width :
- 4mm
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Published :
- 2009
- Pin Count :
- 8
- Height :
- 1.5mm
- Fall Time (Typ) :
- 42.2 ns
- Number of Pins :
- 8
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±20V
- Turn On Delay Time :
- 15.3 ns
- Drain to Source Voltage (Vdss) :
- 30V
- Length :
- 5mm
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Terminal Form :
- Gull wing
- Power Dissipation :
- 2.12W
- Input Capacitance (Ciss) (Max) @ Vds :
- 4068pF @ 25V
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- 260
- Continuous Drain Current (ID) :
- 17A
- Contact Plating :
- Tin
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 4.3m Ω @ 7.5A, 10V
- FET Type :
- N-Channel
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Rise Time :
- 4.7ns
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Turn-Off Delay Time :
- 68.6 ns
- Current - Continuous Drain (Id) @ 25°C :
- 10.6A Ta
- Datasheets
- NTMS4920NR2G

N-Channel Tape & Reel (TR) 4.3m Ω @ 7.5A, 10V ±20V 4068pF @ 25V 58.9nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)
NTMS4920NR2G Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4068pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 68.6 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 15.3 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 30V, it should remain above the 30V level.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
NTMS4920NR2G Features
a continuous drain current (ID) of 17A
the turn-off delay time is 68.6 ns
a 30V drain to source voltage (Vdss)
NTMS4920NR2G Applications
There are a lot of ON Semiconductor
NTMS4920NR2G applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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