NTMS4916NR2G

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Mfr.Part #
NTMS4916NR2G
Manufacturer
onsemi
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET N-CH 30V 7.8A 8SOIC
Stock
1,971
In Stock :
1,971

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Continuous Drain Current (ID) :
11.6A
Pin Count :
8
Vgs (Max) :
±20V
Element Configuration :
Single
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Drain to Source Breakdown Voltage :
30V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lead Free :
Lead Free
Transistor Element Material :
SILICON
Contact Plating :
Tin
Surface Mount :
yes
Radiation Hardening :
No
Number of Terminations :
8
Lifecycle Status :
ACTIVE (Last Updated: 19 hours ago)
Operating Temperature :
-55°C~150°C TJ
Power Dissipation :
1.3W
Transistor Application :
SWITCHING
Fall Time (Typ) :
15.6 ns
Published :
2011
Operating Mode :
ENHANCEMENT MODE
Current - Continuous Drain (Id) @ 25°C :
7.8A Ta
Number of Elements :
1
Drain Current-Max (Abs) (ID) :
9.4A
Pbfree Code :
yes
Turn On Delay Time :
9.4 ns
Length :
5mm
Width :
4mm
Vgs(th) (Max) @ Id :
2.5V @ 250μA
Terminal Position :
Dual
Drain-source On Resistance-Max :
0.009Ohm
Rise Time :
7.4ns
Input Capacitance (Ciss) (Max) @ Vds :
1376pF @ 25V
FET Type :
N-Channel
RoHS Status :
ROHS3 Compliant
ECCN Code :
EAR99
Turn-Off Delay Time :
32 ns
Rds On (Max) @ Id, Vgs :
9m Ω @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs :
15nC @ 4.5V
Factory Lead Time :
6 Weeks
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Power Dissipation-Max :
890mW Ta
Terminal Form :
Gull wing
JESD-609 Code :
e3
Height :
1.5mm
Number of Pins :
8
Packaging :
Tape and Reel (TR)
Gate to Source Voltage (Vgs) :
20V
Mounting Type :
Surface Mount
Datasheets
NTMS4916NR2G
Introducing Transistors - FETs, MOSFETs - Single onsemi NTMS4916NR2G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:8-SOIC (0.154, 3.90mm Width), Number of Terminations:8, Operating Temperature:-55°C~150°C TJ, Number of Pins:8, Mounting Type:Surface Mount, NTMS4916NR2G pinout, NTMS4916NR2G datasheet PDF, NTMS4916NR2G amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NTMS4916NR2G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NTMS4916NR2G


N-Channel Tape & Reel (TR) 9m Ω @ 12A, 10V ±20V 1376pF @ 25V 15nC @ 4.5V 8-SOIC (0.154, 3.90mm Width)

NTMS4916NR2G Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1376pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.There is no drain current on this device since the maximum continuous current it can conduct is 9.4A.As a result of its turn-off delay time, which is 32 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 9.4 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

NTMS4916NR2G Features


a continuous drain current (ID) of 11.6A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 32 ns


NTMS4916NR2G Applications


There are a lot of ON Semiconductor
NTMS4916NR2G applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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