NTMS4916NR2G
- Mfr.Part #
- NTMS4916NR2G
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 7.8A 8SOIC
- Stock
- 1,971
- In Stock :
- 1,971
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 11.6A
- Pin Count :
- 8
- Vgs (Max) :
- ±20V
- Element Configuration :
- Single
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Drain to Source Breakdown Voltage :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Contact Plating :
- Tin
- Surface Mount :
- yes
- Radiation Hardening :
- No
- Number of Terminations :
- 8
- Lifecycle Status :
- ACTIVE (Last Updated: 19 hours ago)
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 1.3W
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 15.6 ns
- Published :
- 2011
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 7.8A Ta
- Number of Elements :
- 1
- Drain Current-Max (Abs) (ID) :
- 9.4A
- Pbfree Code :
- yes
- Turn On Delay Time :
- 9.4 ns
- Length :
- 5mm
- Width :
- 4mm
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Terminal Position :
- Dual
- Drain-source On Resistance-Max :
- 0.009Ohm
- Rise Time :
- 7.4ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 1376pF @ 25V
- FET Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Turn-Off Delay Time :
- 32 ns
- Rds On (Max) @ Id, Vgs :
- 9m Ω @ 12A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 4.5V
- Factory Lead Time :
- 6 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Power Dissipation-Max :
- 890mW Ta
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Height :
- 1.5mm
- Number of Pins :
- 8
- Packaging :
- Tape and Reel (TR)
- Gate to Source Voltage (Vgs) :
- 20V
- Mounting Type :
- Surface Mount
- Datasheets
- NTMS4916NR2G

N-Channel Tape & Reel (TR) 9m Ω @ 12A, 10V ±20V 1376pF @ 25V 15nC @ 4.5V 8-SOIC (0.154, 3.90mm Width)
NTMS4916NR2G Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1376pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.There is no drain current on this device since the maximum continuous current it can conduct is 9.4A.As a result of its turn-off delay time, which is 32 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 9.4 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
NTMS4916NR2G Features
a continuous drain current (ID) of 11.6A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 32 ns
NTMS4916NR2G Applications
There are a lot of ON Semiconductor
NTMS4916NR2G applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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