NTMS4807NR2G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Pbfree Code :

yes

Turn On Delay Time :

14 ns

Power Dissipation-Max :

860mW Ta

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

9.1A Ta

Published :

2007

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

8

Number of Terminations :

8

Contact Plating :

Tin

Element Configuration :

Single

JESD-609 Code :

e3

Number of Elements :

1

Terminal Form :

Gull wing

Radiation Hardening :

No

Number of Pins :

8

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Factory Lead Time :

2 Weeks

Drain to Source Breakdown Voltage :

30V

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 4.5V

Length :

5mm

Fall Time (Typ) :

6.5 ns

FET Type :

N-Channel

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Time@Peak Reflow Temperature-Max (s) :

40

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Height :

1.5mm

Input Capacitance (Ciss) (Max) @ Vds :

2900pF @ 24V

Vgs(th) (Max) @ Id :

3V @ 250µA

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Surface Mount :

yes

Turn-Off Delay Time :

47 ns

Continuous Drain Current (ID) :

12.2A

Terminal Position :

Dual

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

1.55W

Rise Time :

6.5ns

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

6.1m Ω @ 14.8A, 10V

Width :

4mm

Packaging :

Tape and Reel (TR)