NTMS4802NR2G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

4m Ω @ 18A, 10V

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Published :

2008

Vgs (Max) :

±20V

Turn On Delay Time :

18 ns

Power Dissipation :

2.5W

Current - Continuous Drain (Id) @ 25°C :

11.1A Ta

Drain to Source Breakdown Voltage :

30V

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

5300pF @ 25V

Gate to Source Voltage (Vgs) :

20V

Terminal Position :

Dual

Terminal Finish :

Tin (Sn)

FET Type :

N-Channel

Number of Elements :

1

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 4.5V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Fall Time (Typ) :

56 ns

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Factory Lead Time :

9 Weeks

Continuous Drain Current (ID) :

15A

Turn-Off Delay Time :

70 ns

Number of Terminations :

8

Transistor Application :

SWITCHING

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Transistor Element Material :

SILICON

Pin Count :

8

Resistance :

4mOhm

JESD-609 Code :

e3

Power Dissipation-Max :

910mW Ta

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pbfree Code :

yes

Rise Time :

42ns

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Pins :

8

Lead Free :

Lead Free