NTMS4801NR2G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

9.9A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

31 Weeks

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Power Dissipation :

2.1W

Nominal Vgs :

2.5 V

Terminal Position :

Dual

Number of Terminations :

8

Terminal Finish :

Tin (Sn)

Mounting Type :

Surface Mount

Rise Time :

3.7ns

Drain to Source Breakdown Voltage :

30V

Pbfree Code :

yes

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

9.8 ns

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Feedback Cap-Max (Crss) :

225 pF

Turn-Off Delay Time :

29 ns

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Number of Pins :

8

Pin Count :

8

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Height :

1.5mm

Length :

5mm

Current - Continuous Drain (Id) @ 25°C :

7.5A Ta

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Rds On (Max) @ Id, Vgs :

9m Ω @ 12A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

2201pF @ 25V

Lead Free :

Lead Free

Drain-source On Resistance-Max :

0.009Ohm

Power Dissipation-Max :

800mW Ta

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Width :

4mm

FET Type :

N-Channel

Surface Mount :

yes

Published :

2009

JESD-609 Code :

e3

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Turn On Delay Time :

10.5 ns

Drain Current-Max (Abs) (ID) :

7.5A

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Element Configuration :

Single