NTMS4706NR2G
- Mfr.Part #
- NTMS4706NR2G
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 6.4A 8SOIC
- Stock
- 29,706
- In Stock :
- 29,706
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Surface Mount :
- yes
- Terminal Finish :
- MATTE TIN
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 950pF @ 24V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 30V
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 4.5V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JESD-30 Code :
- R-PDSO-G8
- Rds On (Max) @ Id, Vgs :
- 12m Ω @ 10.3A, 10V
- Qualification Status :
- COMMERCIAL
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 8
- Drain Current-Max (Abs) (ID) :
- 6.4A
- Vgs (Max) :
- ±20V
- DS Breakdown Voltage-Min :
- 30V
- Pin Count :
- 8
- Terminal Form :
- Gull wing
- Current - Continuous Drain (Id) @ 25°C :
- 6.4A Ta
- Drain-source On Resistance-Max :
- 0.012Ohm
- Operating Temperature :
- -55°C~150°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Terminal Position :
- Dual
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Power Dissipation-Max :
- 830mW Ta
- Datasheets
- NTMS4706NR2G

N-Channel Tape & Reel (TR) 12m Ω @ 10.3A, 10V ±20V 950pF @ 24V 15nC @ 4.5V 30V 8-SOIC (0.154, 3.90mm Width)
NTMS4706NR2G Overview
A device's maximal input capacitance is 950pF @ 24V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 6.4A, which is the maximum continuous current the device can conduct.To maintain normal operation, it is recommended that the DS breakdown voltage be above 30V.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
NTMS4706NR2G Features
a 30V drain to source voltage (Vdss)
NTMS4706NR2G Applications
There are a lot of Rochester Electronics, LLC
NTMS4706NR2G applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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