NTMS4706NR2
- Mfr.Part #
- NTMS4706NR2
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 6.4A 8SOIC
- Stock
- 2,792
- In Stock :
- 2,792
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Power Dissipation :
- 1.5W
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Turn-Off Delay Time :
- 24 ns
- Packaging :
- Tape and Reel (TR)
- Drain-source On Resistance-Max :
- 0.012Ohm
- Fall Time (Typ) :
- 4 ns
- Number of Terminations :
- 8
- Qualification Status :
- Not Qualified
- Vgs (Max) :
- ±20V
- Drain to Source Breakdown Voltage :
- 30V
- Continuous Drain Current (ID) :
- 6.4A
- Voltage - Rated DC :
- 30V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Input Capacitance (Ciss) (Max) @ Vds :
- 950pF @ 24V
- Mount :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Current Rating :
- 8.6A
- Peak Reflow Temperature (Cel) :
- 240
- Transistor Element Material :
- SILICON
- FET Type :
- N-Channel
- Pin Count :
- 8
- Lead Free :
- Contains Lead
- Rds On (Max) @ Id, Vgs :
- 12m Ω @ 10.3A, 10V
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 4.5V
- Reach Compliance Code :
- not_compliant
- Published :
- 2005
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- RoHS Status :
- Non-RoHS Compliant
- Number of Pins :
- 8
- Current - Continuous Drain (Id) @ 25°C :
- 6.4A Ta
- JESD-609 Code :
- e0
- Power Dissipation-Max :
- 830mW Ta
- Transistor Application :
- SWITCHING
- Gate to Source Voltage (Vgs) :
- 20V
- Rise Time :
- 4ns
- Terminal Position :
- Dual
- Datasheets
- NTMS4706NR2

N-Channel Tape & Reel (TR) 12m Ω @ 10.3A, 10V ±20V 950pF @ 24V 15nC @ 4.5V 8-SOIC (0.154, 3.90mm Width)
NTMS4706NR2 Overview
A device's maximum input capacitance is 950pF @ 24V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 6.4A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 24 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
NTMS4706NR2 Features
a continuous drain current (ID) of 6.4A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 24 ns
NTMS4706NR2 Applications
There are a lot of ON Semiconductor
NTMS4706NR2 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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