NTGS4111PT1
- Mfr.Part #
- NTGS4111PT1
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 2.6A 6TSOP
- Stock
- 17,759
- In Stock :
- 17,759
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Turn On Delay Time :
- 9 ns
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 32nC @ 10V
- Published :
- 2005
- Current - Continuous Drain (Id) @ 25°C :
- 2.6A Ta
- Voltage - Rated DC :
- -30V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Rds On (Max) @ Id, Vgs :
- 60m Ω @ 3.7A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 750pF @ 15V
- Height :
- 1mm
- Drain to Source Voltage (Vdss) :
- 30V
- Surface Mount :
- yes
- Continuous Drain Current (ID) :
- 4.7A
- Power Dissipation-Max :
- 630mW Ta
- Operating Mode :
- ENHANCEMENT MODE
- Factory Lead Time :
- 9 Weeks
- Resistance :
- 38mOhm
- Turn-Off Delay Time :
- 38 ns
- ECCN Code :
- EAR99
- Package / Case :
- SOT-23-6
- Number of Pins :
- 6
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 6
- Terminal Position :
- Dual
- Lifecycle Status :
- ACTIVE (Last Updated: 4 hours ago)
- Width :
- 1.7mm
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Form :
- Gull wing
- Drain to Source Breakdown Voltage :
- -30V
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Fall Time (Typ) :
- 9 ns
- Transistor Application :
- SWITCHING
- Length :
- 3.1mm
- Current Rating :
- -4.7A
- Gate to Source Voltage (Vgs) :
- 20V
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 1.25W
- FET Type :
- P-Channel
- Terminal Finish :
- Tin (Sn)
- Drain Current-Max (Abs) (ID) :
- 3.7A
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Rise Time :
- 9ns
- Number of Terminations :
- 6
- Element Configuration :
- Single
- Vgs (Max) :
- ±20V
- Datasheets
- NTGS4111PT1

P-Channel Tape & Reel (TR) 60m Ω @ 3.7A, 10V ±20V 750pF @ 15V 32nC @ 10V 30V SOT-23-6
NTGS4111PT1G Description
NTGS4111PT1G is a type of P-channel power MOSFET provided by ON Semiconductor based on the leading trench process for ultra-low RDS (on). It is able to minimize on-state resistance and provide excellent switching performance. Due to its high quality and reliable performance, it is optimized for a wide range of applications, including battery management and switching, load switching, and more.
NTGS4111PT1G Features
-
Low RDS (on)
-
Low gate charge
-
Advanced switching performance
-
Available in the TSOP-6 package
NTGS4111PT1G Applications
-
Load switching
-
Battery protection
-
Battery management and switching
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