NTGS3136PT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

3.7A Ta

Power Dissipation-Max :

700mW Ta

Operating Mode :

ENHANCEMENT MODE

FET Type :

P-Channel

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

3.7A

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Width :

1.7mm

Terminal Position :

Dual

Pbfree Code :

yes

Number of Terminations :

6

Turn On Delay Time :

9 ns

Published :

2007

Terminal Form :

Gull wing

Element Configuration :

Single

Number of Elements :

1

Drain-source On Resistance-Max :

0.033Ohm

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Turn-Off Delay Time :

99 ns

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

1V @ 250μA

Number of Pins :

6

Rds On (Max) @ Id, Vgs :

33m Ω @ 5.1A, 4.5V

Lead Free :

Lead Free

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Power Dissipation :

1.25W

Package / Case :

SOT-23-6

Rise Time :

9ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

1mm

Factory Lead Time :

10 Weeks

Surface Mount :

yes

Gate to Source Voltage (Vgs) :

8V

Continuous Drain Current (ID) :

-5.1A

Contact Plating :

Tin

Drain to Source Breakdown Voltage :

20V

Transistor Element Material :

SILICON

Length :

3.1mm

Time@Peak Reflow Temperature-Max (s) :

40

Input Capacitance (Ciss) (Max) @ Vds :

1901pF @ 10V

Packaging :

Tape and Reel (TR)

Pin Count :

6

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 4.5V

Fall Time (Typ) :

9 ns

Vgs (Max) :

±8V