NTGS3441T1
- Mfr.Part #
- NTGS3441T1
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 1.65A 6TSOP
- Stock
- 84,961
- In Stock :
- 84,961
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Transistor Application :
- SWITCHING
- Height :
- 1mm
- Terminal Form :
- Gull wing
- Operating Mode :
- ENHANCEMENT MODE
- Turn On Delay Time :
- 13 ns
- Number of Pins :
- 6
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Packaging :
- Cut Tape (CT)
- Length :
- 3.1mm
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 4.5V
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 480pF @ 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Nominal Vgs :
- -1.05 V
- Width :
- 1.7mm
- Pbfree Code :
- yes
- Number of Terminations :
- 6
- Dual Supply Voltage :
- -20V
- Rise Time :
- 23.5ns
- Published :
- 2006
- Gate to Source Voltage (Vgs) :
- 8V
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Vgs (Max) :
- ±8V
- Resistance :
- 90mOhm
- Turn-Off Delay Time :
- 27 ns
- Current - Continuous Drain (Id) @ 25°C :
- 1.65A Ta
- Rds On (Max) @ Id, Vgs :
- 90m Ω @ 3.3A, 4.5V
- Voltage - Rated DC :
- -20V
- JESD-609 Code :
- e3
- Pin Count :
- 6
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Drain to Source Breakdown Voltage :
- -20V
- Current Rating :
- -1A
- Continuous Drain Current (ID) :
- 2.35A
- Power Dissipation-Max :
- 500mW Ta
- Termination :
- SMD/SMT
- Fall Time (Typ) :
- 24 ns
- FET Type :
- P-Channel
- Terminal Finish :
- Tin (Sn)
- Number of Elements :
- 1
- Package / Case :
- SOT-23-6
- Factory Lead Time :
- 16 Weeks
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Power Dissipation :
- 1W
- Threshold Voltage :
- -1.05V
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- Peak Reflow Temperature (Cel) :
- 260
- Surface Mount :
- yes
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Drain to Source Voltage (Vdss) :
- 20V
- Datasheets
- NTGS3441T1

P-Channel Cut Tape (CT) 90m Ω @ 3.3A, 4.5V ±8V 480pF @ 5V 14nC @ 4.5V 20V SOT-23-6
NTGS3441T1G Description
NTGS3441T1G P-channel MOSFET is based on an original, unique vertical structure. NTGS3441T1G MOSFET results in a dramatic reduction in the on-resistance. NTGS3441T1G ON Semiconductor is utilized in the switching power applications such as Cellular and Cordless Telephones, Power Management in Portable Products, Power Management in Battery-Powered Products, PCMCIA Cards.
NTGS3441T1G Features
RoHS Compliant
Higher Efficiency Extending Battery Life
Ultra Low RDS(on)
NTGS3441T1G Applications
Cellular and Cordless Telephones
Power Management in Portable Products
Power Management in Battery-Powered Products
PCMCIA Cards
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