NTGS3443T1G
- Mfr.Part #
- NTGS3443T1G
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 2.2A 6TSOP
- Stock
- 3,000
- In Stock :
- 3,000
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pbfree Code :
- yes
- Terminal Form :
- Gull wing
- Terminal Position :
- Dual
- Height :
- 1mm
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- Fall Time (Typ) :
- 31 ns
- Rise Time :
- 18ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2006
- Gate to Source Voltage (Vgs) :
- 12V
- FET Type :
- P-Channel
- Rds On (Max) @ Id, Vgs :
- 65m Ω @ 4.4A, 4.5V
- Operating Mode :
- ENHANCEMENT MODE
- Pin Count :
- 6
- Vgs (Max) :
- ±12V
- Transistor Application :
- SWITCHING
- Number of Pins :
- 6
- Power Dissipation :
- 2W
- Input Capacitance (Ciss) (Max) @ Vds :
- 565pF @ 5V
- Current - Continuous Drain (Id) @ 25°C :
- 2.2A Ta
- Peak Reflow Temperature (Cel) :
- 260
- Threshold Voltage :
- -950mV
- Terminal Finish :
- Tin (Sn)
- Voltage - Rated DC :
- -20V
- Width :
- 1.7mm
- Continuous Drain Current (ID) :
- 2A
- Number of Terminations :
- 6
- Factory Lead Time :
- 4 Weeks
- Drain to Source Voltage (Vdss) :
- 20V
- Turn On Delay Time :
- 10 ns
- Drain to Source Breakdown Voltage :
- -20V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Surface Mount :
- yes
- Length :
- 3.1mm
- Package / Case :
- SOT-23-6
- Current Rating :
- -2A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Power Dissipation-Max :
- 500mW Ta
- JESD-609 Code :
- e3
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Packaging :
- Cut Tape (CT)
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 4.5V
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 30 ns
- Resistance :
- 65mOhm
- Datasheets
- NTGS3443T1G

P-Channel Cut Tape (CT) 65m Ω @ 4.4A, 4.5V ±12V 565pF @ 5V 15nC @ 4.5V 20V SOT-23-6
NTGS3443T1G Description
NTGS3443T1G is a type of P-channel power MOSFET provided by ON Semiconductor for ultra-low RDS (on). It is able to minimize on-state resistance and provide excellent switching performance. Due to its high quality and reliable performance, it is optimized for a wide range of applications, including power management in portable and battery-powered products.
NTGS3443T1G Features
-
Low RDS (on)
-
Low gate charge
-
Advanced switching performance
-
Available in the TSOP-6 package
NTGS3443T1G Applications
-
Power management
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