NTGS3433T1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

2.35A

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

12V

Terminal Form :

Gull wing

Pin Count :

6

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Package / Case :

SOT-23-6

Continuous Drain Current (ID) :

3.3A

Current Rating :

-3.3A

JESD-609 Code :

e3

ECCN Code :

EAR99

Turn-Off Delay Time :

110 ns

Power Dissipation :

2W

Gate to Source Voltage (Vgs) :

8V

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

2 Weeks

Turn On Delay Time :

20 ns

Element Configuration :

Single

FET Type :

P-Channel

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

-12V

Peak Reflow Temperature (Cel) :

260

Surface Mount :

yes

Number of Pins :

6

Input Capacitance (Ciss) (Max) @ Vds :

550pF @ 5V

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Number of Terminations :

6

Rds On (Max) @ Id, Vgs :

75m Ω @ 3.3A, 4.5V

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

2.35A Ta

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

500mW Ta

Rise Time :

20ns

Voltage - Rated DC :

-12V

Transistor Application :

SWITCHING

Number of Elements :

1

Contact Plating :

Tin

Radiation Hardening :

No

Fall Time (Typ) :

100 ns

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.075Ohm

Vgs (Max) :

±8V

Published :

2006

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 4.5V