NTGS3443BT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

SOT-23-6

Drain-source On Resistance-Max :

0.06Ohm

Rds On (Max) @ Id, Vgs :

60m Ω @ 3.7A, 4.5V

Number of Elements :

1

FET Type :

P-Channel

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

6

Terminal Finish :

Tin

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Number of Terminations :

6

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Qualification Status :

COMMERCIAL

Transistor Application :

SWITCHING

Surface Mount :

yes

DS Breakdown Voltage-Min :

20V

Input Capacitance (Ciss) (Max) @ Vds :

819pF @ 10V

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

20V

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

Current - Continuous Drain (Id) @ 25°C :

2.7A Ta

Mounting Type :

Surface Mount

Vgs (Max) :

±12V

Pbfree Code :

yes

JESD-30 Code :

R-PDSO-G6

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

700mW Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

2.7A