NTE329

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - RF

Number of Elements :

1

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 400mA, 2V

Manufacturer :

NTE Electronics

Series :

-

Transistor Application :

AMPLIFIER

Current - Collector (Ic) (Max) :

1A

Transistor Element Material :

SILICON

RoHS :

Compliant

Transistor Type :

NPN

Mounting Type :

Through Hole

Pin Count :

3

Power Dissipation Ambient-Max :

5 W

JESD-30 Code :

O-MBCY-W3

Noise Figure (dB Typ @ f) :

-

Number of Terminals :

3

Surface Mount :

No

Case Connection :

COLLECTOR

Package Shape :

Round

Polarity/Channel Type :

NPN

Frequency - Transition :

-

Qualification Status :

Not Qualified

Product Status :

Active

ECCN Code :

EAR99

Terminal Position :

BOTTOM

Package :

Bag

Operating Temperature :

-

Terminal Form :

Wire

Power - Max :

5W

Reach Compliance Code :

Unknown

JEDEC-95 Code :

TO-39

Power Dissipation-Max (Abs) :

5 W

Collector Current-Max (IC) :

1 A

Collector-Emitter Voltage-Max :

30 V

DC Current Gain-Min (hFE) :

10

Supplier Device Package :

TO-39

Voltage - Collector Emitter Breakdown (Max) :

30V

Gain :

10dB

Package / Case :

TO-205AD, TO-39-3 Metal Can

Configuration :

Single

Subcategory :

Other Transistors