NTE319P

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - RF

DC Current Gain-Min (hFE) :

35

Power - Max :

625mW

Noise Figure (dB Typ @ f) :

2.7dB @ 45MHz

Package :

Bag

Series :

-

HTS Code :

8541.21.00.75

Configuration :

Single

Number of Terminals :

3

Surface Mount :

No

Transistor Application :

AMPLIFIER

Terminal Position :

BOTTOM

Mounting Type :

Through Hole

Pin Count :

3

Number of Elements :

1

Operating Temperature :

150°C (TJ)

Collector-Base Capacitance-Max :

0.22 pF

JEDEC-95 Code :

TO-92

Reach Compliance Code :

Unknown

Polarity/Channel Type :

NPN

ECCN Code :

EAR99

Current - Collector (Ic) (Max) :

50mA

Qualification Status :

Not Qualified

Voltage - Collector Emitter Breakdown (Max) :

20V

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

JESD-30 Code :

O-PBCY-W3

Gain :

29dB

Subcategory :

Other Transistors

Collector-Emitter Voltage-Max :

20 V

Frequency - Transition :

500MHz

Power Dissipation-Max (Abs) :

0.5 W

Transistor Element Material :

SILICON

Manufacturer :

NTE Electronics

Collector Current-Max (IC) :

0.05 A

Supplier Device Package :

TO-92

Highest Frequency Band :

VERY HIGH FREQUENCY BAND

Package Shape :

Round

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 2mA, 10V

Terminal Form :

Wire

Product Status :

Active

Transistor Type :

NPN