NTE2987

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminals :

3

Channel Mode :

Enhancement

Continuous Drain Current :

20(A)

Rad Hardened :

No

Drain to Source Voltage (Vdss) :

100 V

Terminal Position :

Single

Pin Count :

3 +Tab

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Through Hole

Operating Temperature Classification :

Military

Transistor Element Material :

SILICON

Configuration :

Single

Polarity/Channel Type :

N-Channel

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

80 A

Power Dissipation (Max) :

105W (Tc)

Drive Voltage (Max Rds On, Min Rds On) :

5V

Package / Case :

TO-220-3

Product Status :

Active

Polarity :

N

Terminal Form :

THROUGH-HOLE

Transistor Application :

SWITCHING

Gate-Source Voltage (Max) :

±15(V)

Package Type :

TO-220

Rds On (Max) @ Id, Vgs :

120mOhm @ 10A, 5V

Manufacturer :

NTE Electronics

Package Shape :

RECTANGULAR

Drain-Source On-Volt :

100(V)

Series :

-

JESD-30 Code :

R-PSFM-T3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

175°C (TJ)

Surface Mount :

No

Input Capacitance (Ciss) (Max) @ Vds :

1500 pF @ 25 V

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

20A

Power Dissipation :

105(W)

Vgs (Max) :

±15V

Drain-source On Resistance-Max :

0.12 Ω

Operating Temp Range :

-65C to 175C

Avalanche Energy Rating (Eas) :

120 mJ

Gate Charge (Qg) (Max) @ Vgs :

30 nC @ 5 V

DS Breakdown Voltage-Min :

100 V

Mounting :

Through Hole

Additional Feature :

FAST SWITCHING

Technology :

MOSFET (Metal Oxide)

Supplier Device Package :

TO-220

FET Feature :

Logic Level Gate, 4V Drive

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

Unknown

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Number of Elements :

1

Qualification Status :

Not Qualified

Type :

Power MOSFET

ECCN Code :

EAR99

Package :

Bag