NTE2935

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Package :

Bag

Operating Temperature :

-55°C ~ 150°C (TJ)

Number of Elements :

1

Technology :

MOSFET (Metal Oxide)

Pulsed Drain Current-Max (IDM) :

34 A

Surface Mount :

No

Rds On (Max) @ Id, Vgs :

850mOhm @ 3.1A, 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain-source On Resistance-Max :

0.85 Ω

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

74 nC @ 10 V

FET Type :

N-Channel

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Terminal Form :

THROUGH-HOLE

Vgs (Max) :

±30V

Supplier Device Package :

TO-3PML

Number of Terminals :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

500 V

Mounting Type :

Through Hole

Avalanche Energy Rating (Eas) :

641 mJ

Input Capacitance (Ciss) (Max) @ Vds :

1550 pF @ 25 V

Package Shape :

RECTANGULAR

Drain to Source Voltage (Vdss) :

500 V

Manufacturer :

NTE Electronics

Reach Compliance Code :

Unknown

Series :

-

Qualification Status :

Not Qualified

Package / Case :

TO-3P-3 Full Pack

Current - Continuous Drain (Id) @ 25°C :

6.2A (Tc)

Drain Current-Max (Abs) (ID) :

6.2 A

Power Dissipation-Max (Abs) :

85 W

Drive Voltage (Max Rds On, Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

FET Feature :

-

Polarity/Channel Type :

N-Channel

Subcategory :

FET General Purpose Power

JESD-30 Code :

R-PSFM-T3

Product Status :

Active

Power Dissipation (Max) :

85W (Tc)

Transistor Element Material :

SILICON