NTE2935

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

6.2 A

Package Shape :

RECTANGULAR

Power Dissipation (Max) :

85W (Tc)

Pulsed Drain Current-Max (IDM) :

34 A

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

500 V

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On, Min Rds On) :

10V

Series :

-

Number of Terminals :

3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Product Status :

Active

Gate Charge (Qg) (Max) @ Vgs :

74 nC @ 10 V

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C ~ 150°C (TJ)

JESD-30 Code :

R-PSFM-T3

Subcategory :

FET General Purpose Power

Rds On (Max) @ Id, Vgs :

850mOhm @ 3.1A, 10V

Supplier Device Package :

TO-3PML

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

1550 pF @ 25 V

FET Feature :

-

Drain-source On Resistance-Max :

0.85 Ω

Number of Elements :

1

Transistor Application :

SWITCHING

FET Type :

N-Channel

Surface Mount :

No

Transistor Element Material :

SILICON

Power Dissipation-Max (Abs) :

85 W

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

641 mJ

Vgs (Max) :

±30V

Current - Continuous Drain (Id) @ 25°C :

6.2A (Tc)

Package / Case :

TO-3P-3 Full Pack

Polarity/Channel Type :

N-Channel

Drain to Source Voltage (Vdss) :

500 V

Terminal Form :

THROUGH-HOLE

Technology :

MOSFET (Metal Oxide)

Manufacturer :

NTE Electronics

Package :

Bag

Reach Compliance Code :

Unknown