NTE2933

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Reach Compliance Code :

Unknown

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

FET Type :

N-Channel

Package Shape :

RECTANGULAR

Operating Temperature :

-55°C ~ 150°C (TJ)

Drain-source On Resistance-Max :

0.55 Ω

Avalanche Energy Rating (Eas) :

549 mJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

THROUGH-HOLE

Transistor Application :

SWITCHING

Technology :

MOSFET (Metal Oxide)

Pulsed Drain Current-Max (IDM) :

44 A

Package :

Bag

Supplier Device Package :

TO-3PML

FET Feature :

-

Drain to Source Voltage (Vdss) :

400 V

Series :

-

Current - Continuous Drain (Id) @ 25°C :

8A (Tc)

Gate Charge (Qg) (Max) @ Vgs :

75 nC @ 10 V

JESD-30 Code :

R-PSFM-T3

Surface Mount :

No

Polarity/Channel Type :

N-Channel

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

1530 pF @ 25 V

Package / Case :

TO-3P-3 Full Pack

Power Dissipation (Max) :

85W (Tc)

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

400 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

Vgs (Max) :

±30V

Operating Mode :

ENHANCEMENT MODE

Product Status :

Active

Number of Terminals :

3

Number of Elements :

1

Manufacturer :

NTE Electronics

Rds On (Max) @ Id, Vgs :

550mOhm @ 4A, 10V