NTD5C688NLT4G
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- Mfr.Part #
- NTD5C688NLT4G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 7.5A/17A DPAK
- Stock
- 6,798
- In Stock ：
- 6,798
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-609 Code :
- e3
- Rds On (Max) @ Id, Vgs :
- 27.4m Ω @ 10A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 7.5A Ta 17A Tc
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Operating Temperature :
- -55°C~175°C TJ
- Packaging :
- Tape and Reel (TR)
- Vgs(th) (Max) @ Id :
- 2.1V @ 250μA
- Terminal Finish :
- Tin (Sn)
- Factory Lead Time :
- 8 Weeks
- RoHS Status :
- RoHS Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Datasheets
- NTD5C688NLT4G
N-Channel Tape & Reel (TR) 27.4m Ω @ 10A, 10V TO-252-3, DPak (2 Leads + Tab), SC-63
NTD5C688NLT4G Description
The NTD5C688NLT4G is a Power MOSFET with 60 V, 27.4 m, 17 A, Single N−Channel. A special kind of metal-oxide-semiconductor field-effect transistor (MOSFET) made to handle high power levels is known as a power MOSFET. High switching speed and good efficiency at low voltages are its key benefits over other power semiconductor devices like insulated-gate bipolar transistors (IGBT) or thyristors. It has an easy-to-drive gate that it shares with the IGBT. They occasionally have low gain to the point that a larger gate voltage is required than the control voltage.
NTD5C688NLT4G Features
-
Low RDS(on) to Minimize Conduction Losses
-
Low QG and Capacitance to Minimize Driver Losses
-
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
-
Compliant
NTD5C688NLT4G Applications
-
DC-DC converters
-
Motor control
-
Automotive applications
-
Switch Mode Power Supplies (SMPS)
-
Residential, commercial, architectural and street lighting
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