NTD50N03RG

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Mfr.Part #
NTD50N03RG
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 25V 7.8A/45A DPAK
Stock
30,944
In Stock :
30,944

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 11.5V
Number of Elements :
1
Input Capacitance (Ciss) (Max) @ Vds :
750pF @ 12V
Gate Charge (Qg) (Max) @ Vgs :
15nC @ 11.5V
Vgs (Max) :
±20V
Configuration :
SINGLE WITH BUILT-IN DIODE
Pbfree Code :
yes
Transistor Application :
SWITCHING
JESD-30 Code :
R-PSSO-G2
Pulsed Drain Current-Max (IDM) :
180A
Drain-source On Resistance-Max :
0.014Ohm
Case Connection :
DRAIN
Terminal Finish :
MATTE TIN
Terminal Position :
Single
Power Dissipation-Max :
1.5W Ta 50W Tc
Avalanche Energy Rating (Eas) :
20 mJ
Time@Peak Reflow Temperature-Max (s) :
40
Surface Mount :
yes
FET Type :
N-Channel
Rds On (Max) @ Id, Vgs :
12m Ω @ 30A, 11.5V
Mounting Type :
Surface Mount
Drain Current-Max (Abs) (ID) :
7.8A
Number of Terminations :
2
Drain to Source Voltage (Vdss) :
25V
Peak Reflow Temperature (Cel) :
260
Transistor Element Material :
SILICON
Packaging :
Tube
RoHS Status :
ROHS3 Compliant
Terminal Form :
Gull wing
Pin Count :
3
JESD-609 Code :
e3
Operating Temperature :
-55°C~175°C TJ
Current - Continuous Drain (Id) @ 25°C :
7.8A Ta 45A Tc
Operating Mode :
ENHANCEMENT MODE
Qualification Status :
COMMERCIAL
DS Breakdown Voltage-Min :
25V
Reach Compliance Code :
Unknown
Vgs(th) (Max) @ Id :
2V @ 250μA
Datasheets
NTD50N03RG
Introducing Transistors - FETs, MOSFETs - Single onsemi NTD50N03RG from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type:Surface Mount, Number of Terminations:2, Operating Temperature:-55°C~175°C TJ, NTD50N03RG pinout, NTD50N03RG datasheet PDF, NTD50N03RG amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NTD50N03RG ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NTD50N03RG


N-Channel Tube 12m Ω @ 30A, 11.5V ±20V 750pF @ 12V 15nC @ 11.5V 25V TO-252-3, DPak (2 Leads + Tab), SC-63

NTD50N03RG Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 20 mJ.A device's maximal input capacitance is 750pF @ 12V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 7.8A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 180A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 25V.This transistor requires a 25V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 11.5V).

NTD50N03RG Features


the avalanche energy rating (Eas) is 20 mJ
based on its rated peak drain current 180A.
a 25V drain to source voltage (Vdss)


NTD50N03RG Applications


There are a lot of Rochester Electronics, LLC
NTD50N03RG applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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