NTD50N03RG
- Mfr.Part #
- NTD50N03RG
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 7.8A/45A DPAK
- Stock
- 30,944
- In Stock :
- 30,944
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 11.5V
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 750pF @ 12V
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 11.5V
- Vgs (Max) :
- ±20V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- R-PSSO-G2
- Pulsed Drain Current-Max (IDM) :
- 180A
- Drain-source On Resistance-Max :
- 0.014Ohm
- Case Connection :
- DRAIN
- Terminal Finish :
- MATTE TIN
- Terminal Position :
- Single
- Power Dissipation-Max :
- 1.5W Ta 50W Tc
- Avalanche Energy Rating (Eas) :
- 20 mJ
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Surface Mount :
- yes
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 12m Ω @ 30A, 11.5V
- Mounting Type :
- Surface Mount
- Drain Current-Max (Abs) (ID) :
- 7.8A
- Number of Terminations :
- 2
- Drain to Source Voltage (Vdss) :
- 25V
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Packaging :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Pin Count :
- 3
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~175°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 7.8A Ta 45A Tc
- Operating Mode :
- ENHANCEMENT MODE
- Qualification Status :
- COMMERCIAL
- DS Breakdown Voltage-Min :
- 25V
- Reach Compliance Code :
- Unknown
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Datasheets
- NTD50N03RG

N-Channel Tube 12m Ω @ 30A, 11.5V ±20V 750pF @ 12V 15nC @ 11.5V 25V TO-252-3, DPak (2 Leads + Tab), SC-63
NTD50N03RG Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 20 mJ.A device's maximal input capacitance is 750pF @ 12V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 7.8A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 180A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 25V.This transistor requires a 25V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 11.5V).
NTD50N03RG Features
the avalanche energy rating (Eas) is 20 mJ
based on its rated peak drain current 180A.
a 25V drain to source voltage (Vdss)
NTD50N03RG Applications
There are a lot of Rochester Electronics, LLC
NTD50N03RG applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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