NTD5406NT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

2500pF @ 32V

Drain to Source Breakdown Voltage :

40V

Turn-Off Delay Time :

20 ns

Voltage - Rated DC :

40V

Width :

6.22mm

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

10m Ω @ 30A, 10V

Rise Time :

147ns

Length :

6.73mm

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

12.2A Ta 70A Tc

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Radiation Hardening :

No

Element Configuration :

Single

Number of Pins :

3

RoHS Status :

RoHS Compliant

Pin Count :

3

Turn On Delay Time :

7.2 ns

Lifecycle Status :

CONSULT SALES OFFICE (Last Updated: 2 days ago)

FET Type :

N-Channel

Power Dissipation :

100W

ECCN Code :

EAR99

Published :

2006

Power Dissipation-Max :

3W Ta 100W Tc

Packaging :

Tape and Reel (TR)

Current Rating :

70A

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Height :

2.38mm

Continuous Drain Current (ID) :

70A

Mounting Type :

Surface Mount

Fall Time (Typ) :

29 ns

Pbfree Code :

yes