NTD50N03RT4

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

20 mJ

Case Connection :

DRAIN

Pbfree Code :

No

Number of Terminations :

2

Drain to Source Voltage (Vdss) :

25V

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2V @ 250μA

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

TIN LEAD

Rds On (Max) @ Id, Vgs :

12m Ω @ 30A, 11.5V

Surface Mount :

yes

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

235

Transistor Element Material :

SILICON

Power Dissipation-Max :

1.5W Ta 50W Tc

Pin Count :

3

Reach Compliance Code :

Unknown

Pulsed Drain Current-Max (IDM) :

180A

JESD-609 Code :

e0

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

750pF @ 12V

Qualification Status :

COMMERCIAL

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

7.8A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 11.5V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 11.5V

DS Breakdown Voltage-Min :

25V

RoHS Status :

Non-RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

7.8A Ta 45A Tc

FET Type :

N-Channel

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain-source On Resistance-Max :

0.014Ohm

Operating Mode :

ENHANCEMENT MODE