NTD5802NT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Turn On Delay Time :

14 ns

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-G2

Rise Time :

52ns

Case Connection :

DRAIN

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

16.4A Ta 101A Tc

Turn-Off Delay Time :

39 ns

Length :

6.73mm

Power Dissipation-Max :

2.5W Ta 93.75W Tc

Drain-source On Resistance-Max :

0.0078Ohm

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Height :

2.38mm

Pbfree Code :

yes

Number of Pins :

3

Number of Terminations :

2

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

240 mJ

Power Dissipation :

93.75W

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Published :

2007

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Factory Lead Time :

14 Weeks

Element Configuration :

Single

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

FET Type :

N-Channel

Surface Mount :

yes

Drain to Source Breakdown Voltage :

40V

Number of Elements :

1

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

4.4m Ω @ 50A, 10V

Fall Time (Typ) :

8.5 ns

Continuous Drain Current (ID) :

16.4A

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Width :

6.22mm

Input Capacitance (Ciss) (Max) @ Vds :

5025pF @ 25V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Lead Free :

Lead Free