NTD5802NT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Finish :

Tin (Sn)

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

16.4A Ta 101A Tc

Number of Elements :

1

Drain-source On Resistance-Max :

0.0078Ohm

Width :

6.22mm

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

FET Type :

N-Channel

Power Dissipation-Max :

2.5W Ta 93.75W Tc

Fall Time (Typ) :

8.5 ns

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

40V

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Lead Free :

Lead Free

Turn On Delay Time :

14 ns

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

4.4m Ω @ 50A, 10V

Avalanche Energy Rating (Eas) :

240 mJ

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G2

Power Dissipation :

93.75W

Height :

2.38mm

Number of Terminations :

2

Pbfree Code :

yes

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

5025pF @ 25V

Transistor Element Material :

SILICON

Surface Mount :

yes

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2007

Pin Count :

3

Radiation Hardening :

No

Factory Lead Time :

14 Weeks

Turn-Off Delay Time :

39 ns

Length :

6.73mm

Number of Pins :

3

Rise Time :

52ns

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Continuous Drain Current (ID) :

16.4A

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V