NTD5802NT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Terminal Form :

Gull wing

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

40V

Input Capacitance (Ciss) (Max) @ Vds :

5025pF @ 25V

Published :

2007

Avalanche Energy Rating (Eas) :

240 mJ

Fall Time (Typ) :

8.5 ns

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Transistor Application :

SWITCHING

Turn On Delay Time :

14 ns

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Power Dissipation :

93.75W

JESD-609 Code :

e3

Factory Lead Time :

14 Weeks

Continuous Drain Current (ID) :

16.4A

Pin Count :

3

Surface Mount :

yes

Width :

6.22mm

Drain-source On Resistance-Max :

0.0078Ohm

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Vgs (Max) :

±20V

Number of Pins :

3

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

Current - Continuous Drain (Id) @ 25°C :

16.4A Ta 101A Tc

Power Dissipation-Max :

2.5W Ta 93.75W Tc

Turn-Off Delay Time :

39 ns

Case Connection :

DRAIN

Pbfree Code :

yes

Length :

6.73mm

Height :

2.38mm

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

4.4m Ω @ 50A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Rise Time :

52ns

Number of Terminations :

2

RoHS Status :

ROHS3 Compliant