NTD50N03R-001

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Mfr.Part #
NTD50N03R-001
Manufacturer
onsemi
Package / Case
TO-251-3 Stub Leads, IPak
Datasheet
Download
Description
MOSFET N-CH 25V 7.8A/45A IPAK
Stock
15,375
In Stock :
15,375

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation :
1.5W
Rise Time :
84ns
Current - Continuous Drain (Id) @ 25°C :
7.8A Ta 45A Tc
Mounting Type :
Through Hole
FET Type :
N-Channel
Gate to Source Voltage (Vgs) :
20V
Power Dissipation-Max :
1.5W Ta 50W Tc
Gate Charge (Qg) (Max) @ Vgs :
15nC @ 11.5V
Mount :
Through Hole
Lead Free :
Contains Lead
Drain to Source Breakdown Voltage :
25V
Package / Case :
TO-251-3 Stub Leads, IPak
Continuous Drain Current (ID) :
45A
Vgs(th) (Max) @ Id :
2V @ 250μA
Packaging :
Tube
Turn-Off Delay Time :
11.2 ns
Fall Time (Typ) :
84 ns
Input Capacitance (Ciss) (Max) @ Vds :
750pF @ 12V
Element Configuration :
Single
Rds On (Max) @ Id, Vgs :
12m Ω @ 30A, 11.5V
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 11.5V
Operating Temperature :
-55°C~175°C TJ
Published :
2007
Voltage - Rated DC :
25V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
Non-RoHS Compliant
Current Rating :
45A
Vgs (Max) :
±20V
Datasheets
NTD50N03R-001
Introducing Transistors - FETs, MOSFETs - Single onsemi NTD50N03R-001 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-251-3 Stub Leads, IPak, Operating Temperature:-55°C~175°C TJ, NTD50N03R-001 pinout, NTD50N03R-001 datasheet PDF, NTD50N03R-001 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NTD50N03R-001 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NTD50N03R-001


N-Channel Tube 12m Ω @ 30A, 11.5V ±20V 750pF @ 12V 15nC @ 11.5V TO-251-3 Stub Leads, IPak

NTD50N03R-001 Overview


The maximum input capacitance of this device is 750pF @ 12V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 45A.When VGS=25V, and ID flows to VDS at 25VVDS, the drain-source breakdown voltage is 25V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 11.2 ns.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (4.5V 11.5V), this device helps reduce its power consumption.

NTD50N03R-001 Features


a continuous drain current (ID) of 45A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 11.2 ns


NTD50N03R-001 Applications


There are a lot of ON Semiconductor
NTD50N03R-001 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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