NTD5406NG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2006

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Lifecycle Status :

OBSOLETE (Last Updated: 1 week ago)

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Number of Pins :

3

Terminal Finish :

Tin (Sn)

Element Configuration :

Single

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

2500pF @ 32V

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Case Connection :

DRAIN

Number of Terminations :

2

Pbfree Code :

yes

Current Rating :

70A

Drain-source On Resistance-Max :

0.01Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

12.2A Ta 70A Tc

Pin Count :

3

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Qualification Status :

Not Qualified

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

150A

Transistor Application :

SWITCHING

Packaging :

Tube

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~175°C TJ

Drain to Source Breakdown Voltage :

40V

Power Dissipation :

100W

Fall Time (Typ) :

29 ns

Avalanche Energy Rating (Eas) :

450 mJ

Voltage - Rated DC :

40V

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Rise Time :

147ns

Turn-Off Delay Time :

20 ns

Rds On (Max) @ Id, Vgs :

10m Ω @ 30A, 10V

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

70A

JESD-609 Code :

e3

FET Type :

N-Channel

RoHS Status :

RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Power Dissipation-Max :

3W Ta 100W Tc