NTD5867NLT4G
- Mfr.Part #
- NTD5867NLT4G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 20A DPAK
- Stock
- 4,309
- In Stock :
- 4,309
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- FET Type :
- N-Channel
- Additional Feature :
- AVALANCHE RATED
- Pulsed Drain Current-Max (IDM) :
- 76A
- Radiation Hardening :
- No
- Threshold Voltage :
- 1.8V
- Published :
- 2007
- Lead Free :
- Lead Free
- Terminal Form :
- Gull wing
- Resistance :
- 39mOhm
- Turn On Delay Time :
- 6.5 ns
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 675pF @ 25V
- Fall Time (Typ) :
- 2.4 ns
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Case Connection :
- DRAIN
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Vgs (Max) :
- ±20V
- Power Dissipation-Max :
- 36W Tc
- Contact Plating :
- Tin
- Width :
- 6.22mm
- Factory Lead Time :
- 8 Weeks
- JESD-30 Code :
- R-PSSO-G2
- Surface Mount :
- yes
- Continuous Drain Current (ID) :
- 20A
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Turn-Off Delay Time :
- 18.2 ns
- Transistor Element Material :
- SILICON
- Height :
- 2.38mm
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 10V
- Power Dissipation :
- 36W
- Length :
- 6.73mm
- Drain to Source Breakdown Voltage :
- 60V
- Rds On (Max) @ Id, Vgs :
- 39m Ω @ 10A, 10V
- Pin Count :
- 4
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Rise Time :
- 12.6ns
- Number of Pins :
- 4
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Nominal Vgs :
- 1.8 V
- Turn Off Time-Max (toff) :
- 20.6ns
- Packaging :
- Tape and Reel (TR)
- REACH SVHC :
- No SVHC
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Terminations :
- 2
- Datasheets
- NTD5867NLT4G
NTD5867NLT4G Documents

N-Channel Tape & Reel (TR) 39m Ω @ 10A, 10V ±20V 675pF @ 25V 15nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
NTD5867NLT4G Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 675pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 20A amps.In this device, the drain-source breakdown voltage is 60V and VGS=60V, so the drain-source breakdown voltage is 60V in this case.It is [18.2 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 76A.A turn-on delay time of 6.5 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 1.8V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
NTD5867NLT4G Features
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 18.2 ns
based on its rated peak drain current 76A.
a threshold voltage of 1.8V
NTD5867NLT4G Applications
There are a lot of ON Semiconductor
NTD5867NLT4G applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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