NTD5867NLT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

8 Weeks

Pin Count :

4

Surface Mount :

yes

Case Connection :

DRAIN

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Power Dissipation-Max :

36W Tc

Length :

6.73mm

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

60V

Threshold Voltage :

1.8V

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Turn Off Time-Max (toff) :

20.6ns

Mounting Type :

Surface Mount

Number of Pins :

4

Turn-Off Delay Time :

18.2 ns

Nominal Vgs :

1.8 V

Additional Feature :

AVALANCHE RATED

Number of Terminations :

2

Element Configuration :

Single

Continuous Drain Current (ID) :

20A

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel

Radiation Hardening :

No

ECCN Code :

EAR99

Lead Free :

Lead Free

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Width :

6.22mm

Vgs (Max) :

±20V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Rds On (Max) @ Id, Vgs :

39m Ω @ 10A, 10V

Rise Time :

12.6ns

JESD-609 Code :

e3

Resistance :

39mOhm

Height :

2.38mm

Input Capacitance (Ciss) (Max) @ Vds :

675pF @ 25V

Pulsed Drain Current-Max (IDM) :

76A

Power Dissipation :

36W

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Published :

2007

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

2.4 ns

Turn On Delay Time :

6.5 ns

Packaging :

Tape and Reel (TR)