NTD5867NL-1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

20A

Input Capacitance (Ciss) (Max) @ Vds :

675pF @ 25V

Rds On (Max) @ Id, Vgs :

39m Ω @ 10A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

18 mJ

Packaging :

Tube

Pbfree Code :

yes

JESD-30 Code :

R-PSIP-T3

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

No

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Pin Count :

3

Power Dissipation-Max :

36W Tc

FET Type :

N-Channel

Transistor Element Material :

SILICON

Terminal Finish :

MATTE TIN

DS Breakdown Voltage-Min :

60V

Mounting Type :

Through Hole

Qualification Status :

COMMERCIAL

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

76A

Drain-source On Resistance-Max :

0.05Ohm

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Number of Terminations :

3

Drain to Source Voltage (Vdss) :

60V