NTD5865NLT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

16m Ω @ 20A, 10V

JESD-30 Code :

R-PSSO-G2

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

2V @ 250μA

Pin Count :

4

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Turn On Delay Time :

8.4 ns

Number of Pins :

4

Continuous Drain Current (ID) :

46A

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Power Dissipation :

52W

Length :

6.73mm

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 25V

Power Dissipation-Max :

71W Tc

Current - Continuous Drain (Id) @ 25°C :

46A Tc

Lead Free :

Lead Free

Published :

2009

Drain to Source Breakdown Voltage :

60V

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

12 Weeks

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

40

Height :

2.38mm

Vgs (Max) :

±20V

Number of Terminations :

2

Contact Plating :

Tin

Radiation Hardening :

No

Width :

6.22mm

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Rise Time :

12.4ns

Resistance :

16mOhm

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

N-Channel

Threshold Voltage :

1V

Terminal Form :

Gull wing

Fall Time (Typ) :

4.4 ns

Case Connection :

DRAIN

Turn-Off Delay Time :

26 ns

Surface Mount :

yes

Avalanche Energy Rating (Eas) :

36 mJ

Transistor Element Material :

SILICON

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V