NTD5865NL-1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

60V

Length :

6.73mm

Transistor Element Material :

SILICON

Power Dissipation-Max :

71W Tc

Case Connection :

DRAIN

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

46A Tc

Number of Pins :

4

Rise Time :

12.4ns

Element Configuration :

Single

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 day ago)

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Pin Count :

4

Number of Terminations :

3

Resistance :

16mOhm

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

2V @ 250μA

Width :

2.38mm

Avalanche Energy Rating (Eas) :

36 mJ

RoHS Status :

RoHS Compliant

Fall Time (Typ) :

4.4 ns

Height :

7.62mm

Published :

2010

JESD-30 Code :

R-PSIP-T3

Lead Free :

Lead Free

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Pbfree Code :

yes

Surface Mount :

No

Turn On Delay Time :

8.4 ns

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

16m Ω @ 20A, 10V

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 25V

Packaging :

Tube

Continuous Drain Current (ID) :

46A

ECCN Code :

EAR99

Vgs (Max) :

±20V

Power Dissipation :

52W

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Turn-Off Delay Time :

26 ns

Mounting Type :

Through Hole

Terminal Finish :

Tin (Sn)