NTD5865N-1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSIP-T3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Pin Count :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

18m Ω @ 20A, 10V

Pulsed Drain Current-Max (IDM) :

137A

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.018Ohm

Current - Continuous Drain (Id) @ 25°C :

43A Tc

DS Breakdown Voltage-Min :

60V

Terminal Form :

THROUGH-HOLE

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Voltage (Vdss) :

60V

FET Type :

N-Channel

Case Connection :

DRAIN

Surface Mount :

No

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

38A

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Finish :

MATTE TIN

Input Capacitance (Ciss) (Max) @ Vds :

1.261pF @ 25V

Avalanche Energy Rating (Eas) :

36 mJ

Transistor Application :

SWITCHING

Number of Terminations :

3

Qualification Status :

COMMERCIAL

Packaging :

Tube

Power Dissipation-Max :

71W Tc