NTD5862NT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

60 ns

Pbfree Code :

yes

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Rds On (Max) @ Id, Vgs :

5.7m Ω @ 45A, 10V

Current - Continuous Drain (Id) @ 25°C :

98A Tc

Pin Count :

3

Lead Free :

Lead Free

Terminal Finish :

Tin (Sn)

DS Breakdown Voltage-Min :

60V

Element Configuration :

Single

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

98A

Drain to Source Voltage (Vdss) :

60V

Gate Charge (Qg) (Max) @ Vgs :

82nC @ 10V

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Radiation Hardening :

No

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

90A

Factory Lead Time :

15 Weeks

Terminal Form :

Gull wing

Published :

2010

Turn On Delay Time :

18 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Terminations :

2

Surface Mount :

yes

Lifecycle Status :

ACTIVE (Last Updated: 23 hours ago)

ECCN Code :

EAR99

Rise Time :

70ns

Number of Elements :

1

Turn-Off Delay Time :

35 ns

Power Dissipation :

96W

Input Capacitance (Ciss) (Max) @ Vds :

6000pF @ 25V

JESD-30 Code :

R-PSSO-G2

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.0057Ohm

Avalanche Energy Rating (Eas) :

205 mJ

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

115W Tc

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN