NTD5862NT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

98A Tc

Continuous Drain Current (ID) :

98A

Operating Temperature :

-55°C~175°C TJ

Drain Current-Max (Abs) (ID) :

90A

Lifecycle Status :

ACTIVE (Last Updated: 23 hours ago)

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

205 mJ

Vgs (Max) :

±20V

Turn-Off Delay Time :

35 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn On Delay Time :

18 ns

JESD-609 Code :

e3

Power Dissipation-Max :

115W Tc

JESD-30 Code :

R-PSSO-G2

Terminal Finish :

Tin (Sn)

Number of Pins :

3

Power Dissipation :

96W

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

6000pF @ 25V

Lead Free :

Lead Free

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Rise Time :

70ns

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

60 ns

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

82nC @ 10V

Drain-source On Resistance-Max :

0.0057Ohm

Number of Elements :

1

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

5.7m Ω @ 45A, 10V

Case Connection :

DRAIN

Surface Mount :

yes

Number of Terminations :

2

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

60V

Factory Lead Time :

15 Weeks

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

60V

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Mounting Type :

Surface Mount

Radiation Hardening :

No

Published :

2010

Transistor Element Material :

SILICON