NTD5807NT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

31m Ω @ 5A, 10V

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Power Dissipation-Max :

33W Tc

Length :

6.73mm

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

FET Type :

N-Channel

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Case Connection :

DRAIN

Turn On Delay Time :

11.2 ns

Element Configuration :

Single

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 5 days ago)

Vgs (Max) :

±20V

Power Dissipation :

33W

Turn-Off Delay Time :

15.6 ns

Height :

2.38mm

Number of Pins :

4

Pbfree Code :

yes

Fall Time (Typ) :

2 ns

Gate to Source Voltage (Vgs) :

20V

Surface Mount :

yes

RoHS Status :

RoHS Compliant

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

603pF @ 25V

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

40V

Lead Free :

Lead Free

Rise Time :

20.4ns

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2008

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

23A

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Elements :

1

Pin Count :

4

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

23A Tc

Width :

6.22mm

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63