NTD5804NT4G
- Mfr.Part #
- NTD5804NT4G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 69A DPAK
- Stock
- 2,634
- In Stock :
- 2,634
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Surface Mount :
- yes
- RoHS Status :
- RoHS Compliant
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Turn-Off Delay Time :
- 26.8 ns
- REACH SVHC :
- No SVHC
- Current - Continuous Drain (Id) @ 25°C :
- 69A Tc
- Packaging :
- Tape and Reel (TR)
- Turn On Delay Time :
- 11.8 ns
- Mounting Type :
- Surface Mount
- Width :
- 6.22mm
- Case Connection :
- DRAIN
- Height :
- 2.38mm
- Drain-source On Resistance-Max :
- 0.0085Ohm
- Power Dissipation :
- 71W
- Operating Temperature :
- -55°C~175°C TJ
- ECCN Code :
- EAR99
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 3 days ago)
- Gate to Source Voltage (Vgs) :
- 20V
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 8.5m Ω @ 30A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Rise Time :
- 18.7ns
- Number of Terminations :
- 2
- Fall Time (Typ) :
- 5.9 ns
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 3.5V @ 250µA
- Vgs (Max) :
- ±20V
- Length :
- 6.73mm
- Gate Charge (Qg) (Max) @ Vgs :
- 45nC @ 10V
- Published :
- 1997
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 2850pF @ 25V
- Lead Free :
- Lead Free
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Number of Pins :
- 4
- Drain to Source Breakdown Voltage :
- 40V
- JESD-30 Code :
- R-PSSO-G2
- Power Dissipation-Max :
- 71W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 69A
- Threshold Voltage :
- 2V
- Pin Count :
- 4
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Terminal Finish :
- Tin (Sn)
- Terminal Form :
- Gull wing
- Datasheets
- NTD5804NT4G
NTD5804NT4G Documents

N-Channel Tape & Reel (TR) 8.5m Ω @ 30A, 10V ±20V 2850pF @ 25V 45nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
NTD5804NT4G Description
Power MOSFET is a specific type of metal oxide semiconductor field effect transistor (MOSFET) designed to handle significant power levels. Compared with other new power semiconductor devices, such as insulated gate bipolar transistor (IGBT) or thyristor, its main advantages are fast switching speed and high efficiency at low voltage. It shares an isolation door with IGBT, making it easier to drive. They may be affected by low gain, sometimes to the extent that the gate voltage needs to be higher than the controlled voltage.
NTD5804NT4G Features
? Low RDS(on)
? High Current Capability
? Avalanche Energy Specified
? NTDV, STDV and SVD Prefix for Automotive and Other
Applications Requiring Unique Site and Control Change
Requirements; AEC?Q101 Qualified and PPAP Capable
? These Devices are Pb?Free and are RoHS Compliant
NTD5804NT4G Applications
? CCFL Backlight
? DC Motor Control
? Class D Amplifier
? Power Supply Secondary Side Synchronous Rectification
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Shipping CostShipping Cost starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).If customer have shipping account, we can make shipment under customer’s shipping account with freight collect directly.
The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
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