NTD5804NT4G

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Mfr.Part #
NTD5804NT4G
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 40V 69A DPAK
Stock
2,634
In Stock :
2,634

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Surface Mount :
yes
RoHS Status :
RoHS Compliant
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Turn-Off Delay Time :
26.8 ns
REACH SVHC :
No SVHC
Current - Continuous Drain (Id) @ 25°C :
69A Tc
Packaging :
Tape and Reel (TR)
Turn On Delay Time :
11.8 ns
Mounting Type :
Surface Mount
Width :
6.22mm
Case Connection :
DRAIN
Height :
2.38mm
Drain-source On Resistance-Max :
0.0085Ohm
Power Dissipation :
71W
Operating Temperature :
-55°C~175°C TJ
ECCN Code :
EAR99
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 3 days ago)
Gate to Source Voltage (Vgs) :
20V
JESD-609 Code :
e3
Transistor Application :
SWITCHING
Rds On (Max) @ Id, Vgs :
8.5m Ω @ 30A, 10V
Drive Voltage (Max Rds On,Min Rds On) :
5V 10V
Rise Time :
18.7ns
Number of Terminations :
2
Fall Time (Typ) :
5.9 ns
Number of Elements :
1
Vgs(th) (Max) @ Id :
3.5V @ 250µA
Vgs (Max) :
±20V
Length :
6.73mm
Gate Charge (Qg) (Max) @ Vgs :
45nC @ 10V
Published :
1997
Transistor Element Material :
SILICON
Element Configuration :
Single
Input Capacitance (Ciss) (Max) @ Vds :
2850pF @ 25V
Lead Free :
Lead Free
FET Type :
N-Channel
Operating Mode :
ENHANCEMENT MODE
Number of Pins :
4
Drain to Source Breakdown Voltage :
40V
JESD-30 Code :
R-PSSO-G2
Power Dissipation-Max :
71W Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Continuous Drain Current (ID) :
69A
Threshold Voltage :
2V
Pin Count :
4
Radiation Hardening :
No
Pbfree Code :
yes
Terminal Finish :
Tin (Sn)
Terminal Form :
Gull wing
Introducing Transistors - FETs, MOSFETs - Single onsemi NTD5804NT4G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, Number of Terminations:2, Number of Pins:4, NTD5804NT4G pinout, NTD5804NT4G datasheet PDF, NTD5804NT4G amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NTD5804NT4G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NTD5804NT4G


N-Channel Tape & Reel (TR) 8.5m Ω @ 30A, 10V ±20V 2850pF @ 25V 45nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

NTD5804NT4G    Description

 

 Power MOSFET is a specific type of metal oxide semiconductor field effect transistor (MOSFET) designed to handle significant power levels. Compared with other new power semiconductor devices, such as insulated gate bipolar transistor (IGBT) or thyristor, its main advantages are fast switching speed and high efficiency at low voltage. It shares an isolation door with IGBT, making it easier to drive. They may be affected by low gain, sometimes to the extent that the gate voltage needs to be higher than the controlled voltage.

 


NTD5804NT4G       Features


? Low RDS(on)

? High Current Capability

? Avalanche Energy Specified

? NTDV, STDV and SVD Prefix for Automotive and Other

Applications Requiring Unique Site and Control Change

Requirements; AEC?Q101 Qualified and PPAP Capable

? These Devices are Pb?Free and are RoHS Compliant


NTD5804NT4G      Applications


? CCFL Backlight

? DC Motor Control

? Class D Amplifier

? Power Supply Secondary Side Synchronous Rectification


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