NTD5804NT4G
- Mfr.Part #
- NTD5804NT4G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 69A DPAK
- Stock
- 2,634
- In Stock :
- 2,634
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tape and Reel (TR)
- JESD-30 Code :
- R-PSSO-G2
- Operating Mode :
- ENHANCEMENT MODE
- Case Connection :
- DRAIN
- Fall Time (Typ) :
- 5.9 ns
- Width :
- 6.22mm
- Current - Continuous Drain (Id) @ 25°C :
- 69A Tc
- Turn-Off Delay Time :
- 26.8 ns
- Threshold Voltage :
- 2V
- Pin Count :
- 4
- Mounting Type :
- Surface Mount
- Vgs (Max) :
- ±20V
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 69A
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- FET Type :
- N-Channel
- Published :
- 1997
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- ECCN Code :
- EAR99
- Drain-source On Resistance-Max :
- 0.0085Ohm
- Power Dissipation-Max :
- 71W Tc
- Vgs(th) (Max) @ Id :
- 3.5V @ 250µA
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 8.5m Ω @ 30A, 10V
- Surface Mount :
- yes
- Gate Charge (Qg) (Max) @ Vgs :
- 45nC @ 10V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Length :
- 6.73mm
- RoHS Status :
- RoHS Compliant
- Terminal Finish :
- Tin (Sn)
- Number of Pins :
- 4
- Gate to Source Voltage (Vgs) :
- 20V
- Turn On Delay Time :
- 11.8 ns
- Power Dissipation :
- 71W
- Input Capacitance (Ciss) (Max) @ Vds :
- 2850pF @ 25V
- REACH SVHC :
- No SVHC
- Drain to Source Breakdown Voltage :
- 40V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 3 days ago)
- Rise Time :
- 18.7ns
- Operating Temperature :
- -55°C~175°C TJ
- JESD-609 Code :
- e3
- Number of Terminations :
- 2
- Height :
- 2.38mm
- Pbfree Code :
- yes
- Datasheets
- NTD5804NT4G
NTD5804NT4G Documents

N-Channel Tape & Reel (TR) 8.5m Ω @ 30A, 10V ±20V 2850pF @ 25V 45nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
NTD5804NT4G Description
Power MOSFET is a specific type of metal oxide semiconductor field effect transistor (MOSFET) designed to handle significant power levels. Compared with other new power semiconductor devices, such as insulated gate bipolar transistor (IGBT) or thyristor, its main advantages are fast switching speed and high efficiency at low voltage. It shares an isolation door with IGBT, making it easier to drive. They may be affected by low gain, sometimes to the extent that the gate voltage needs to be higher than the controlled voltage.
NTD5804NT4G Features
? Low RDS(on)
? High Current Capability
? Avalanche Energy Specified
? NTDV, STDV and SVD Prefix for Automotive and Other
Applications Requiring Unique Site and Control Change
Requirements; AEC?Q101 Qualified and PPAP Capable
? These Devices are Pb?Free and are RoHS Compliant
NTD5804NT4G Applications
? CCFL Backlight
? DC Motor Control
? Class D Amplifier
? Power Supply Secondary Side Synchronous Rectification
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Shipping CostShipping Cost starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).If customer have shipping account, we can make shipment under customer’s shipping account with freight collect directly.
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