NTD5803NT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

Unknown

Number of Terminations :

2

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PDSO-G2

Transistor Element Material :

SILICON

FET Type :

N-Channel

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

76A

Qualification Status :

COMMERCIAL

DS Breakdown Voltage-Min :

40V

Pin Count :

3

Drain to Source Voltage (Vdss) :

40V

Pulsed Drain Current-Max (IDM) :

228A

Rds On (Max) @ Id, Vgs :

7.2m Ω @ 50A, 10V

Power Dissipation-Max :

83W Tc

Terminal Finish :

Tin

Avalanche Energy Rating (Eas) :

240 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

76A Tc

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

3.22pF @ 25V

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.0072Ohm

Gate Charge (Qg) (Max) @ Vgs :

51nC @ 10V

Vgs (Max) :

±20V