NTD5803NT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

40V

Avalanche Energy Rating (Eas) :

240 mJ

Surface Mount :

yes

Reach Compliance Code :

Unknown

Number of Terminations :

2

Terminal Finish :

Tin

Qualification Status :

COMMERCIAL

Terminal Form :

Gull wing

Pbfree Code :

yes

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

40V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

76A Tc

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Power Dissipation-Max :

83W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

3.22pF @ 25V

JESD-30 Code :

R-PDSO-G2

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

7.2m Ω @ 50A, 10V

Transistor Application :

SWITCHING

Number of Elements :

1

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Drain-source On Resistance-Max :

0.0072Ohm

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

228A

Pin Count :

3

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

51nC @ 10V

Drain Current-Max (Abs) (ID) :

76A