NTD2955T4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

yes

Nominal Vgs :

-2.8 V

Fall Time (Typ) :

48 ns

Case Connection :

DRAIN

Turn-Off Delay Time :

26 ns

Height :

2.38mm

Length :

6.73mm

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation :

55W

Factory Lead Time :

8 Weeks

Published :

2005

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

10 ns

Input Capacitance (Ciss) (Max) @ Vds :

750pF @ 25V

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Rise Time :

45ns

Number of Terminations :

2

Width :

6.22mm

JESD-609 Code :

e3

Resistance :

180mOhm

REACH SVHC :

No SVHC

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

-2.8V

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Contact Plating :

Tin

Continuous Drain Current (ID) :

12A

Packaging :

Cut Tape (CT)

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

40

Rds On (Max) @ Id, Vgs :

180m Ω @ 6A, 10V

Current Rating :

-12A

Voltage - Rated DC :

-60V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Current - Continuous Drain (Id) @ 25°C :

12A Ta

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

260

Pin Count :

3

Number of Channels :

1

Number of Pins :

3

Lead Free :

Lead Free

FET Type :

P-Channel

Drain to Source Voltage (Vdss) :

60V

Drain to Source Breakdown Voltage :

-60V

Power Dissipation-Max :

55W Tj

Vgs (Max) :

±20V