NTD20N06-001

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Mfr.Part #
NTD20N06-001
Manufacturer
onsemi
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
MOSFET N-CH 60V 20A IPAK
Stock
16,985
In Stock :
16,985

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Lead Free :
Contains Lead
Current - Continuous Drain (Id) @ 25°C :
20A Ta
Rise Time :
60.5ns
Vgs(th) (Max) @ Id :
4V @ 250µA
Current Rating :
20A
FET Type :
N-Channel
Published :
2009
Power Dissipation :
60W
Voltage - Rated DC :
60V
Input Capacitance (Ciss) (Max) @ Vds :
1015pF @ 25V
Operating Temperature :
-55°C~175°C TJ
Vgs (Max) :
±20V
Turn-Off Delay Time :
27.1 ns
Gate to Source Voltage (Vgs) :
20V
Rds On (Max) @ Id, Vgs :
46m Ω @ 10A, 10V
Packaging :
Tube
Fall Time (Typ) :
37.1 ns
Element Configuration :
Single
Gate Charge (Qg) (Max) @ Vgs :
30nC @ 10V
RoHS Status :
Non-RoHS Compliant
Continuous Drain Current (ID) :
20A
Drain to Source Breakdown Voltage :
60V
Mount :
Through Hole
Drive Voltage (Max Rds On,Min Rds On) :
10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Power Dissipation-Max :
1.88W Ta 60W Tj
Mounting Type :
Through Hole
Datasheets
NTD20N06-001
Introducing Transistors - FETs, MOSFETs - Single onsemi NTD20N06-001 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type:Through Hole, NTD20N06-001 pinout, NTD20N06-001 datasheet PDF, NTD20N06-001 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NTD20N06-001 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NTD20N06-001


N-Channel Tube 46m Ω @ 10A, 10V ±20V 1015pF @ 25V 30nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA

NTD20N06-001 Overview


A device's maximal input capacitance is 1015pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 20A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 27.1 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (10V).

NTD20N06-001 Features


a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 27.1 ns


NTD20N06-001 Applications


There are a lot of ON Semiconductor
NTD20N06-001 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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